ICE22N60 n-channel enhancement mode mosfet features: low r ds(on) ultra low gate charge high dv/dt capability high unclamped inductive switching (uis) capability high peak current capability increased transconductance performance optimized design for high performance power systems symbol parameter value unit conditions i d continous drain current 22 a t c = 25c i d , pulse pulsed drain current 82 a t c = 25c e as avalanche energy, single pulse 690 mj i d = 11.5a i ar avalanche current, repetitive 10 a limited by t j max dv/dt mosfet dv/dt ruggedness 50 v/ns v ds = 480v, i d = 22a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 208 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m 2.5 screws maximum ratings @ tj = 25c, unless otherwise specifed product summary i d t a = 25c 22a max v (br)dss i d = 250ua 650v min r ds(on) v gs = 10v 0.14? typ q g v ds = 480v 82nc typ micross components ltd, united kingdom, tel: +44 1603 788967, fax: +44 1603 788920, web: www.micross.com, email: chipcomponents@micross.com 1 thermal characteristics r thjc thermal resistance, junction to case - - 0.6 c/w r thja thermal resistance, junction to ambient - - 62 leaded t sold soldering temperature, wave soldering only allowed at leads - - 260 c 1.6mm (0.063in.) from case for 10s pin description: to-220 d g s symbol parameter values unit conditions min typ max electrical characteristics @ tj = 25c, unless otherwise specifed static characteristics v (br)dss drain to source breakdown voltage 600 650 - v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 2.5 3 3.5 v ds = v gs , i d = 250a i dss zero gate voltage drain current - 0.1 1 a v ds = 600v, v gs = 0v, t j = 25c - - 100 v ds = 600v, v gs = 0v, t j = 150c i gss gate source leakage current - - 100 na v gs = 20v, v ds = 0v r ds(on) drain to source on-state resistance - 0.14 0.16 ? v gs = 10v, i d = 11a, t j = 25c - 0.4 - v gs = 10v, i d = 11a, t j = 150c r gs gate resistance - 4 - ? f = 1 mhz, open drain
ICE22N60 dynamic characteristics c iss input capacitance - 2650 - pf v gs = 0v, v ds = 25v, f = 1 mhz c oss output capacitance - 780 - c rss reverse transfer capacitance - 50 - c oss output capacitance - 80 - v gs = 0v, v ds = 100v, f = 1 mhz g fs transconductance - 20 - s v ds = >2* i d * r ds, i d = 11a t d(on) turn-on delay time - 10 - ns v ds = 380v, v gs = 10v, i d = 22a, r g = 4? (external) t r rise time - 5 - t d(of ) turn-of delay time - 67 - t f fall time - 4.5 - symbol parameter values unit conditions min typ max gate charge characteristics q gs gate to source charge - 16 - nc v ds = 480v, i d = 22a, v gs = 10v q gd gate to drain charge - 30 - q g gate charge total - 82 - v plateau gate plateau voltage - 5 - v reverse diode v sd diode forward voltage - 1.0 1.2 v v gs = 0v, i s = i f t rr reverse recovery time - 423 - ns v rr = 480v, i s = i f , d if /d t = 100 a/s q rr reverse recovery charge - 8 - c i rm peak reverse recovery current - 34 - a micross components ltd, united kingdom, tel: +44 1603 788967, fax: +44 1603 788920, web: www.micross.com, email: chipcomponents@micross.com 2
v gs = 10v to 7v output characteristics transfer characterstics on state resistance vs drain current q g - total gate charge (nc) gate charge on resistance vs junction temperature 6v 5v v gs = 10v i d = 11a v gs - gate to source voltage (v) r ds(on) - on state resistance (m?) i d - drain current (a) i d - drain current (a) r ds(on) - on state resistance (normalized) 10 200 0.5 10 1 30 20 300 1.5 2.0 1.0 20 2 60 70 80 50 40 400 2.5 30 3 500 3.0 3.5 4.0 50 60 70 80 40 4 5 6 7 8 9 10 0 100 0 0.0 0 0 0 0 -50 0 0 15 40 100 75 30 6 10 50 60 70 80 150 125 60 80 8 10 30 20 50 25 20 4 5 10 0 -25 100 2 micross components ltd, united kingdom, tel: +44 1603 788967, fax: +44 1603 788920, web: www.micross.com, email: chipcomponents@micross.com 3 ICE22N60 t j = 150 c 25 c v gs = 10v v ds = 480v i d = 22a v ds - drain to source voltage (v) i d - drain current (a) t j - junction temperature ( c) v gs - gate to source voltage (v)
drain to source breakdown voltage vs. junction temperature -50 25 50 75 100 125 150 0 -25 i d = 1ma v ds - drain to source voltage (v) t j - junction temperature (c) t - time (seconds) maximum rate forward biased safe operating area transient thermal response - junction to case v (br)dss - drain to source breakdown voltage (normalized) r (t) - transit thermal resistance (normalized) i d - drain current (a) single pulse t c = 25c t = 150c v gs = 10v r ds (on) limit package limit thermal limit 0.5 0.2 0.1 10us 100us 1ms 10ms dc 0.05 0.02 single pulse 0.1 0.01 0.9 1.0 1 0.10 1.1 10 100 1.00 1.2 0.01 0.00 0.8 1 1.0e-06 1.0e-04 1.0e-03 1.0e-01 1.0e-00 1.0e-02 1.0e-05 100 1000 10 v ds - drain to source voltage (v) capacitance c - capacitance (pf) crss coss ciss 1000 100 10 10000 0 0 300 400 500 600 200 100 i d = 250a t j - junction temperature (c) gate threshold voltage vs. junction temperature v gs(th) - gate threshold voltage (normalized) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 25 50 75 100 125 150 0 -25 micross components ltd, united kingdom, tel: +44 1603 788967, fax: +44 1603 788920, web: www.micross.com, email: chipcomponents@micross.com 4 notes: p dm t 1 t 1 t 2 t 2 duty cycle, d = ICE22N60
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